skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Creators/Authors contains: "CHANDRASHEKHAR, M_V S"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Wengang, Bi; Haiding, Sun (Ed.)
    An extreme bandgap Al0.64Ga0.36N quantum channel HEMT with Al0.87Ga0.13N top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm—higher than the 9.8 MV/cm expected for the channel’s Al0.64Ga0.36N material. We show that the fraction of this increase is due to the quantization of the 2D electron gas. The polarization field maintains electron quantization in the quantum channel even at low sheet densities, in contrast to conventional HEMT designs. An additional increase in the breakdown field is due to quantum-enabled real space transfer of energetic electrons into high-Al barrier layers in high electric fields. These results show the advantages of the quantum channel design for achieving record-high breakdown voltages and allowing for superior power HEMT devices. 
    more » « less
    Free, publicly-accessible full text available November 1, 2025
  2. State-of-the-art semiconducting aluminum nitride (AlN) films were characterized by cathodoluminescence (CL) spectroscopy in the range of 200–500 nm in an attempt to identify the energy levels within the bandgap and their associated defects. Near-band edge emission (around 206 nm) and high-intensity peaks centered in the near UV range (around 325 nm) are observed for both n- and p-type AlN films. The near UV peaks are potentially associated with oxygen contamination in the films. The p-type AlN films contain at least two unidentified peaks above 400 nm. Assuming that the dopant concentration is independent of compensation (i.e., in the perfect doping limit), three effective donor states are found from Fermi–Dirac statistics for Si-doped AlN, at ∼0.035, ∼0.05, and ∼0.11 eV. Similarly, a single effective acceptor energy of ∼0.03–0.05 eV (depending on the degeneracy factory considered) was found for Be doped AlN. CL investigation of doped AlN films supports claims that AlN may be a promising optoelectronic material, but also points to contaminant mitigation and defect theory as major areas for future study. 
    more » « less
  3. ABSTRACT IntroductionCurrent wearables that collect heart rate and acceleration were not designed for children and/or do not allow access to raw signals, making them fundamentally unverifiable. This study describes the creation and calibration of an open-source multichannel platform (PATCH) designed to measure heart rate and acceleration in children ages 3–8 yr. MethodsChildren (N = 63; mean age, 6.3 yr) participated in a 45-min protocol ranging in intensities from sedentary to vigorous activity. Actiheart-5 was used as a comparison measure. We calculated mean bias, mean absolute error (MAE) mean absolute percent error (MA%E), Pearson correlations, and Lin’s concordance correlation coefficient (CCC). ResultsMean bias between PATCH and Actiheart heart rate was 2.26 bpm, MAE was 6.67 bpm, and M%E was 5.99%. The correlation between PATCH and Actiheart heart rate was 0.89, and CCC was 0.88. For acceleration, mean bias was 1.16 mg and MAE was 12.24 mg. The correlation between PATCH and Actiheart was 0.96, and CCC was 0.95. ConclusionsThe PATCH demonstrated clinically acceptable accuracies to measure heart rate and acceleration compared with a research-grade device. 
    more » « less